Published March 1975
| Version v1
Journal article
Depth distribution and annealing of defects in silicon doped with lithium ions
Creators
- 1. AN Ukrainskoj SSR, Kharkov. Fiziko-Tekhnicheskij Inst.
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Распределение по глубине и отжиг дефектов в кремнии, легированном ионами лития
Publishing Information
- Journal Title
- Fiz. Tverd. Tela
- Journal Volume
- 17
- Journal Issue
- 3
- Series
- Fiz. Tverd. Tela.
- Journal Page Range
- 927-929
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 6202596
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANNEALING; CRYSTAL DEFECTS; HIGH TEMPERATURE; ION IMPLANTATION; KEV RANGE 10-100; LITHIUM IONS; MEDIUM TEMPERATURE; SILICON; SPATIAL DISTRIBUTION
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL STRUCTURE; DISTRIBUTION; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; SEMIMETALS
Optional Information
- Notes
- Published in summary form only; for English translation see the journal Sov. Phys. - Solid State.