Published February 18, 2013 | Version v1
Journal article Metadata-only

Conditions for a carrier multiplication in amorphous-selenium based photodetector

Creators

  • 1. Department of Material Science, International Christian University, S102 Science Hall, ICU, 3-10-2 Osawa, Mitaka, Tokyo 181-8585 (Japan)
  • 2. Nanotube Research Center, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 5, Tsukuba, Ibaraki 305-8568 (Japan)
  • 3. Department of Materials Science and Engineering, National University of Singapore, 7 Engineering Drive 1, Singapore 117574 (Singapore)
  • 4. Department of Clinical Laboratory, Faculty of Medicine, University of Tokyo, 7-3-1 Hongo, Bunkyoku, Tokyo 113-8655 (Japan)

Description

Amorphous selenium is a promising candidate for high sensitivity photodetector due to its unique carrier multiplication phenomenon. More than 10 carriers can be generated per incident photon, which leads to high photo-conversion efficiency of 1000% that allows real-time imaging in dark ambient. However, application of this effect has been limited to specific devices due to the lack in material characterization. In this article, mechanism of carrier multiplication has been clarified using time-of-flight secondary ion mass spectroscopy and Raman spectroscopy. A prototype photodetector achieved photo conversion efficiency of 4000%, which explains the signal enhancement mechanism in a-Se based photodetector.

Additional details

Identifiers

DOI
10.1063/1.4793487;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
102
Journal Issue
7
Journal Page Range
p. 073506-073506.4
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44117186
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
AMORPHOUS STATE; CARRIER DENSITY; CARRIERS; CONVERSION; EFFICIENCY; ION MICROPROBE ANALYSIS; MASS SPECTRA; MASS SPECTROSCOPY; PHOTODETECTORS; PHOTONS; RAMAN SPECTRA; RAMAN SPECTROSCOPY; REAL TIME SYSTEMS; SELENIUM; SENSITIVITY; TIME-OF-FLIGHT METHOD
Descriptors DEC
BOSONS; CHEMICAL ANALYSIS; ELEMENTARY PARTICLES; ELEMENTS; LASER SPECTROSCOPY; MASSLESS PARTICLES; MICROANALYSIS; NONDESTRUCTIVE ANALYSIS; SEMIMETALS; SPECTRA; SPECTROSCOPY

Optional Information

Notes
(c) 2013 American Institute of Physics