Published 1994 | Version v1
Book Metadata-only

Radiation effects on SOI analog devices parameters

Creators

  • 1. CEA Centre d'Etudes de Bruyeres-le-Chatel, 91 (France)
  • 2. CEA Centre d'Etudes de Grenoble, 38 (France). Lab. d'Electronique et d'Instrumentation
  • 3. CEA Centre d'Etudes de Saclay, 91 - Gif-sur-Yvette (France). Dept. d'Astrophysique, de la Physique des Particules, de la Physique Nucleaire et de l'Instrumentation Associee

Description

Radiation (γ, neutrons) effects have been studied on an analog/digital integrated circuit. The changes in electrical parameters are reported. The co-existence of three types of components (junction FET, MOS, bipolar) on the same chip results in improved characteristics. This multicomponent technology appears as a very promising one. (D.L.). 20 refs., 10 figs., 1 tab

Part of:
Radiation and its effects on components and systems

Additional details

Publishing Information

Publisher
Commissariat a l'Energie Atomique.
Imprint Place
Bruyeres-le-Chatel (France)
Imprint Title
Radiation and its effects on components and systems
Imprint Pagination
596 p.
Journal Page Range
p. 378-384.

Conference

Title
2. European Conference on Radiation and its Effects on Components and Systems.
Dates
13-16 Sep 1993.
Place
Saint-Malo (France).

INIS

Country of Publication
France
Country of Input or Organization
France
INIS RN
27008805
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
AMPLIFIERS; COBALT 60; DAMAGING NEUTRON FLUENCE; DIGITAL CIRCUITS; ELECTRICAL PROPERTIES; EXPERIMENTAL DATA; FIELD EFFECT TRANSISTORS; GAMMA RADIATION; INTEGRATED CIRCUITS; LEAKAGE CURRENT; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS; SIGNAL-TO-NOISE RATIO; SILICON OXIDES; TEMPERATURE NOISE; X RADIATION
Descriptors DEC
BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; CHALCOGENIDES; COBALT ISOTOPES; CURRENTS; DATA; ELECTRIC CURRENTS; ELECTROMAGNETIC RADIATION; ELECTRONIC CIRCUITS; EQUIPMENT; INFORMATION; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTOPES; IONIZING RADIATIONS; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; MINUTES LIVING RADIOISOTOPES; NEUTRON FLUENCE; NOISE; NUCLEI; NUMERICAL DATA; ODD-ODD NUCLEI; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATIONS; RADIOISOTOPES; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; TRANSISTORS; YEARS LIVING RADIOISOTOPES

Optional Information