Published November 1987
| Version v1
Journal article
Evidence of a radiation-induced defect level in n-type InSb
Description
Capacitance bridge measurements of loss on irradiated n-type InSb specimens at low temperatures are reported. A peak in a.c. conductance at 51 K is seen after irradiation and it is attributed to a radiation induced level. (author)
Additional details
Publishing Information
- Journal Title
- Solid State Commun.
- Journal Volume
- 64
- Journal Issue
- 8
- Series
- Solid State Commun.
- Journal Page Range
- 1171-1173
- ISSN
- 0038-1098
- CODEN
- SSCOA
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 19026944
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANTIMONIDES; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; FREQUENCY DEPENDENCE; INDIUM COMPOUNDS; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; TEMPERATURE DEPENDENCE; ULTRALOW TEMPERATURE; VERY LOW TEMPERATURE
- Descriptors DEC
- ANTIMONY COMPOUNDS; BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; LEPTON BEAMS; MATERIALS; PARTICLE BEAMS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS