Published June 1987
| Version v1
Journal article
Radiation effects in a dielectric-semiconductor system
Description
The specific features of radiation-induced structural reconstruction in dielectric-semiconductor systems have been systemized. The physical reasons are considered which condition the differences of the radiation-induced effects in Si-SiO2 system at analogous phenomena occurring in its components, taken separately. A significant role played by the force fields (electrical, mechanical) in the radiation effects is shown
Additional details
Additional titles
- Original title (Russian)
- Радиационные эффекты в системе полупроводник-диэлектрик
Publishing Information
- Journal Title
- Poverkhn.: Fiz., Khim., Mekh.
- Journal Issue
- no.6
- Series
- Poverkhn.: Fiz., Khim., Mekh.
- CODEN
- PFKMD
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 19010183
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; CRYSTAL DEFECTS; ELECTRON BEAMS; GAMMA RADIATION; HIGH TEMPERATURE; INTERFACES; KEV RANGE 10-100; MEDIUM TEMPERATURE; MEV RANGE 01-10; MIS TRANSISTORS; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; RADIATION DOSES; SILICON; SILICON OXIDES; SPATIAL DISTRIBUTION; STRAINS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- BEAMS; CHALCOGENIDES; CRYSTAL STRUCTURE; DISTRIBUTION; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONIZING RADIATIONS; KEV RANGE; LEPTON BEAMS; MEV RANGE; NUCLEON BEAMS; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMIMETALS; SILICON COMPOUNDS; TRANSISTORS