Published 2003 | Version v1
Miscellaneous

Anti-apoptotic role of telomerase following gamma-irradiation in human leukemia cell lines of different p53 status

  • 1. Autoridad Regulatoria Nuclear, Buenos Aires (Argentina)
  • 2. Commissariat a l' Energie Atomique, Hopital Saint-Louis, Service de Recherches en Hemato-Immunologie, Paris (France)

Description

Full text: Telomerase is a ribonucleoprotein involved in telomere maintenance and in DNA repair and cell survival. Apoptosis is a key mechanism that controls cell viability. We investigated the relationship between telomerase activity (TA) and apoptosis in gamma-irradiated p53+ Molt4 and p53- KG1a cells. Radiation-induced TA up-regulation was maximal in both cell types 24 h-post-irradiation (p.i.), coinciding with an accumulation of hTERT mARN. PARP inhibition by 3-aminobenzamide and PI3K inhibition by wortmannin partially abrogated this up-regulation. Wortmannin abolished radiation-induced hTERT mRNA accumulation only in Molt4 cells. Radiation-induced apoptosis and G2/M arrest was evident from 4 h-p.i. in Molt4 cells, whereas the G2/M block in KG1a cells was observed at 24 h-p.i., after which apoptosis began to increase. Early radiation-induced apoptosis was enhanced by 3-AB and wortmannin in Molt4 cells. While 3-AB increased late apoptosis in KG1a cells, they were not radio sensitized by wortmannin. Radiation-induced G2/M blockage was abolished in both cell lines by 3-AB, but only by wortmannin in Molt4 cells. These findings suggest an anti-apoptotic role for telomerase that is closely related to p53 status. Telomerase was able to partially block radiation-induced early p53-dependent apoptosis in Molt4 cells, but did not seem to be involved in the modulation of late radiation-induced apoptosis in KG1a cells. (author)

Part of:
Technical memory 2002

Additional details

Additional titles

Original title (English)
Memoria tecnica 2002

Publishing Information

Publisher
ARN
Imprint Place
Buenos Aires (Argentina)
Imprint Title
Technical memory 2002
Imprint Pagination
600 p.
Journal Page Range
p. 569
Report number
INIS-AR-C--341

Optional Information

Notes
Imprint:Memoria tecnica 2002