Published November 1990
| Version v1
Journal article
High-temperature defect structure of lanthanum cuprate
- 1. Dept. of Materials Science and Engineering, Materials Research Center, Technological Inst. of Northwestern Univ., Evanston, IL (United States)
Description
High-temperature (650 degrees to 850 degrees C) electrical conductivity and Seebeck coefficient measurements as functions of oxygen partial pressure and temperature in polycrystalline lanthanum cuprate support a defect model consisting of oxygen interstitials charge compensated by electron holes. The La:Cu ratio was therefore estimated to be 2.000 ± 0.001. By comparison with existing oxygen nonstoichiometry data, the high-temperature electron hole mobility and density-of-states were estimated
Additional details
Publishing Information
- Journal Title
- Journal of the American Ceramic Society
- Journal Volume
- 73
- Journal Issue
- 11
- Series
- J. Am. Ceram. Soc.
- Journal Page Range
- 3453-3456
- ISSN
- 0002-7820
- CODEN
- JACTA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 23010869
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CUPRATES; DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRON DENSITY; HIGH TEMPERATURE; LANTHANUM COMPOUNDS; OXYGEN POTENTIAL; SEEBECK EFFECT; STOICHIOMETRY; SUPERCONDUCTORS
- Descriptors DEC
- COPPER COMPOUNDS; ELECTRICAL PROPERTIES; ENERGY; FREE ENTHALPY; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RARE EARTH COMPOUNDS; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Funding organization
- National Science Foundation, Washington, DC (United States).