Study of pure and Pb2+ ions doped CsI crystals under alpha particles excitations
Creators
- 1. Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)
Description
Scintillation crystals have been used in various fields, such as high energy physics, nuclear instrumentation, radiation measurements, medical imaging, nuclear tomography, astrophysics and other fields of science and engineering. For these applications, the development of good performance scintillation crystals is required. Scintillation crystals based on cesium iodide (CsI) matrix are matters with relatively low hygroscope, easy handling and low cost, characteristics that favor their use as radiation detectors. In this work, pure CsI crystal and lead doped CsI crystals were grown using the Bridgman vertical technique. The concentration of the lead doping element (Pb) was studied in the range of 10-2 M to 5x10-4 M. The distribution of the doping element in the crystalline volume was determined by flame atomic absorption. The CsI:Pb crystal with nominal concentration of 10-3 M was cut into 14 slices of 6 mm. The results show a higher concentration at the top of the crystal with a decrease in the initial phase of growth. The dopant concentration of Pb showed good uniformity from the slice 2 to the slice 12: the region is, therefore, suitable for use as radiation detector. The luminescence emission of these crystals were measured. A predominant luminescence band near 450 nm and a single broad band around 320 nm were found with the addition of the Pb2+ ions. Analyses were carried out to evaluate the developed scintillators, concerning alpha particles. The resolution of 5.6% was obtained for the CsI:Pb 5x10-4 M crystal, when excited with alpha particles from a 241Am source, with energy of 5.54 MeV. (author)
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Additional details
Publishing Information
- Imprint Pagination
- 10 p.
- Report number
- INIS-BR--10104
Conference
- Title
- International nuclear atlantic conference. Nuclear energy: new jobs for a better life; 17. ENFIR: Meeting on nuclear reactor physics and thermal hydraulics; 10. ENAN: Meeting on nuclear applications; 2. ENIN: Meeting on nuclear industry
- Acronym
- INAC 2011
- Dates
- 24-28 Oct 2011
- Place
- Belo Horizonte, MG (Brazil)
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 42103560
- Subject category
- S73: NUCLEAR PHYSICS AND RADIATION PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALPHA PARTICLES; ALPHA SOURCES; CESIUM; CESIUM IODIDES; DOPED MATERIALS; EXCITATION; EXCITED STATES; IODINE; ION IMPLANTATION; LEAD; LEAD IONS
- Descriptors DEC
- ALKALI METAL COMPOUNDS; ALKALI METALS; CESIUM COMPOUNDS; CHARGED PARTICLES; ELEMENTS; ENERGY LEVELS; ENERGY-LEVEL TRANSITIONS; HALIDES; HALOGEN COMPOUNDS; HALOGENS; INORGANIC PHOSPHORS; IODIDES; IODINE COMPOUNDS; ION SOURCES; IONIZING RADIATIONS; IONS; MATERIALS; METALS; NONMETALS; PARTICLE SOURCES; PHOSPHORS; RADIATION SOURCES; RADIATIONS