Published 1989
| Version v1
Journal article
Dislocations and microdefects in Bridgman GaAs
- 1. Akademie der Wissenschaften der DDR, Berlin (German Democratic Republic). Zentralinstitut fuer Elektronenphysik
- 2. Akademie der Wissenschaften der DDR, Halle/Saale (German Democratic Republic). Inst. fuer Festkoerperphysik und Elektronenmikroskopie
Description
The correlation between the dislocation distribution and residual elastic deformations in HB GaAs:Si was shown. Initial stages of the formation of dislocation walls were observed. Three different types of microdefects were found, one located in the seed end, one in the tail end of the crystal and the other at dislocations in the whole crystal volume. (author) 3 refs., 2 figs
Additional details
Publishing Information
- Journal Title
- Materials Science Forum
- Journal Volume
- 38-41
- Series
- Mater. Sci. Forum.
- Journal Page Range
- 957-959
- ISSN
- 0255-5476
- CODEN
- MSFOE
Conference
- Title
- 15. International conference on defects in semiconductors (ICDS-15).
- Dates
- 22-26 Aug 1988.
- Place
- Budapest (Hungary).
INIS
- Country of Publication
- Switzerland
- Country of Input or Organization
- Switzerland
- INIS RN
- 20062171
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL DOPING; CRYSTAL GROWTH; DISLOCATIONS; GALLIUM ARSENIDES; INTERSTITIALS; PRECIPITATION; SILICON; X-RAY DIFFRACTION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIFFRACTION; ELEMENTS; GALLIUM COMPOUNDS; LINE DEFECTS; POINT DEFECTS; SCATTERING; SEMIMETALS; SEPARATION PROCESSES