Published December 2007 | Version v1
Journal article Metadata-only

Deposition and sensing properties of PT/PZT/PT thin films for microforce sensors

Creators

  • 1. Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education, 116023 (China)
  • 2. Key Laboratory for Micro/Nano Technology and System of Liaoning Province, 116023 (China)
  • 3. School of Electronic and Information Engineering, Dalian University of Technology, 116023 (China)

Description

Microforce sensors made of PT/PZT/PT thin films were designed in the micro-Newton range. The PT/PZT/PT thin films were deposited on the Pt/Ti/SiO2/Si substrate by the sol-gel process. Structure and the crystallinity of the deposited films were characterized. The sensing properties of the microforce sensors were measured in static state and in quasi-static state. The sensitivities of the microforce sensors with two different sizes were 0.004 and 0.040 mV μ N-1 in the quasi-static state

Additional details

Identifiers

DOI
10.1088/0031-8949/2007/T129/047;
PII
S0031-8949(07)61564-047;

Publishing Information

Journal Title
Physica Scripta (Online)
Journal Volume
2007
Journal Issue
T129
Journal Page Range
p. 209-212
ISSN
1402-4896

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39028709
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
DEPOSITION; SENSORS; SILICON; SILICON OXIDES; SOL-GEL PROCESS; SUBSTRATES; THIN FILMS
Descriptors DEC
CHALCOGENIDES; ELEMENTS; FILMS; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS