Band bending of n-InN epilayers and exact solution of the classical Thomas-Fermi equation

The exact solution of the Thomas-Fermi equation for a planar accumulation layer of a degenerate semiconductor is presented. The obtained results are compared with theoretical literature data. The applicability of the solution is demonstrated by using results of electrochemical capacitance-voltage measurements and photoluminescence data for n-InN epilayers. It has been found that the difference between the electron concentrations estimated from the Hall and photoluminescence measurements is a measure of the electron content in the accumulation layer with acceptable accuracy. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)