Electrochemical reaction of lithium with orthorhombic bismuth tungstate thin films fabricated by radio-frequency sputtering
Creators
- 1. Department of Chemistry and Laser Chemistry Institute, Shanghai Key Laboratory of Molecular Catalysts and Innovative Materials, Fudan University, Handan Road 220, Shanghai, 200433 (China)
Description
Bi2WO6 thin films with fast deposition rate have been fabricated by radio-frequency (R.F.) sputtering deposition, and are used as positive electrodes in rechargeable thin film lithium batteries. An initial discharge capacity of 113 μAh/cm2-μm is obtainable for Bi2WO6 film electrode with good capacity reversibility. A multiple-center reactive mechanism associated with both Bi3+/Bi0 and W6+/Wx+(x < 6) is investigated by ex situ X-ray diffraction patterns, transmission electron microscopy and selected area electron diffraction techniques, apart from the direct comparison of Bi2WO6 electrochemical performance with those of Bi2O3 and WO3 thin films. A possible explanation about smooth capacity loss of Bi2WO6 after long-term cycling is suggested from the incomplete reaction of Bi component. The advantages of Bi2WO6 thin films over the singer-center Bi2O3 or WO3 thin films are shown in both the aspects of volumetric capacity and cycling life.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.electacta.2009.04.037Additional details
Identifiers
- DOI
- 10.1016/j.electacta.2009.04.037;
- PII
- S0013-4686(09)00561-1;
Publishing Information
- Journal Title
- Electrochimica Acta
- Journal Volume
- 55
- Journal Issue
- 1
- Journal Page Range
- p. 6-12
- ISSN
- 0013-4686
- CODEN
- ELCAAV
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41087436
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BISMUTH IONS; BISMUTH OXIDES; BISMUTH TUNGSTATES; CAPACITY; DEPOSITION; ELECTROCHEMISTRY; ELECTRODES; ELECTRON DIFFRACTION; LITHIUM; ORTHORHOMBIC LATTICES; PERFORMANCE; RADIOWAVE RADIATION; SPUTTERING; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN IONS; TUNGSTEN OXIDES; X-RAY DIFFRACTION
- Descriptors DEC
- ALKALI METALS; BISMUTH COMPOUNDS; CHALCOGENIDES; CHARGED PARTICLES; CHEMISTRY; COHERENT SCATTERING; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELEMENTS; FILMS; IONS; METALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; REFRACTORY METAL COMPOUNDS; SCATTERING; TRANSITION ELEMENT COMPOUNDS; TUNGSTATES; TUNGSTEN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.