Published May 2006
| Version v1
Journal article
Rigorous modeling of carbon nanotube transistors
- 1. Institute for Microelectronics, Technische Universitaet Wien, Gusshausstrasse 27-29, A-1040 Vienna (Austria)
Description
Based on the non-equilibrium Green's function formalism the performance of carbon nanotube field-effect transistors has been studied. The effects of elastic and inelastic scattering on the device performance have been investigated. The results indicate that elastic scattering has a more detrimental effect on the device characteristics than inelastic scattering. Only for short devices the performance is not affected because of the long mean free path for elastic scattering
Availability note (English)
Available online at http://stacks.iop.org/1742-6596/38/29/jpconf6_38_008.pdf or at the Web site for the Journal of Physics. Conference Series (Online) (ISSN 1742-6596) http://www.iop.org/Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 38
- Journal Issue
- 1
- Journal Page Range
- p. 29-32
- ISSN
- 1742-6596
Conference
- Title
- 7. international conference on new phenomena in mesoscopic structures; 5. international conference on surfaces and interfaces of mesoscopic devices
- Dates
- 27 Nov - 2 Dec 2005
- Place
- Maui, HI (United States)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38028616
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CARBON; ELASTIC SCATTERING; EQUILIBRIUM; FIELD EFFECT TRANSISTORS; GREEN FUNCTION; INELASTIC SCATTERING; MEAN FREE PATH; NANOTUBES; PERFORMANCE; SIMULATION
- Descriptors DEC
- ELEMENTS; FUNCTIONS; NANOSTRUCTURES; NONMETALS; SCATTERING; SEMICONDUCTOR DEVICES; TRANSISTORS