Published May 2003
| Version v1
Journal article
Optical characterization of Er-implanted ZnO films formed by sol-gel method
Description
In this paper, we report on the 1.54 μm photoluminescence (PL) of Er-implanted ZnO thin films formed by a sol-gel method on Si substrates. In spite of the polycrystalline structure of the sol-gel ZnO thin films, they showed strong PL emissions due to the near band edge recombination at 375 nm as well as the Er-related luminescence at 1.54 μm. The Er-related luminescence showed no decrease (quench) in the intensity up to the Er concentration of 1.5 x 1021 cm-3. The PL intensity of Er-implanted ZnO at 1.54 μm was found to be as strong as Er-doped PS (porous Si) at 20 K, and the intensity reduced to 1/3 at room temperature
Additional details
Identifiers
- PII
- S0168583X03007468;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 206
- Journal Issue
- 1-4
- Journal Page Range
- p. 287-290
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 13. international conference on ion beam modification of materials
- Dates
- 1-6 Sep 2002
- Place
- Kobe (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Egypt
- INIS RN
- 35049452
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DOPED MATERIALS; ERBIUM IONS; ION IMPLANTATION; PHOTOLUMINESCENCE; POLYCRYSTALS; SILICON; SOL-GEL PROCESS; TEMPERATURE RANGE 0013-0065 K; THIN FILMS; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; CRYSTALS; ELEMENTS; EMISSION; FILMS; IONS; LUMINESCENCE; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; SEMIMETALS; TEMPERATURE RANGE; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.