Vertical GaN Shottky barrier diode with thermally stable TiN anode

Vertical GaN Schottky barrier diodes with TiN anodes were fabricated to investigate the electrical performance. The turn-on voltage and specific on-resistance of diodes are deduced to be approximately 0.41 V and 0.98 mΩ⋅cm², respectively. The current-voltage curves show rectifying characteristics under different temperatures from 25 °C to 200 °C, implying a good thermal stability of TiN/GaN contact. The low-frequency noise follows a 1/f behavior due to the multiple traps and/or barrier inhomogeneous at TiN/GaN interface. The trapping/de-trapping between traps and Fermi level causes the slight capacitance dispersion under reverse voltage. (paper)