Published April 26, 2019 | Version v1
Journal article

High voltage endurance and switchable resistance effect observed in nanoscale copper groove structure

  • 1. State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Key Laboratory of Thin Film and Nano-microfabrication Technology of the Ministry of Education, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China)

Description

A switchable lateral resistance effect with high reverse voltage has been observed in nanoscale copper groove structure. With the stimulation of electric pulse and local illumination of laser, the lateral resistance of the structure can be modulated in a non-volatile manner. We attribute this phenomenon to the different width of depletion region and the Schottky barrier change caused by the nanoscale charge trapping effect. This work may inspire a new approach of resistance modulation and help the development of laser-assisted electric pulse merged devices. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6528/aaff9a

Additional details

Identifiers

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
30
Journal Issue
17
Journal Page Range
[6 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
51047236
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
COPPER; ELECTRIC POTENTIAL; ILLUMINANCE; LASER RADIATION; MODULATION; NANOSTRUCTURES; PULSES; STIMULATION; TRAPPING
Descriptors DEC
ELECTROMAGNETIC RADIATION; ELEMENTS; METALS; RADIATIONS; TRANSITION ELEMENTS