Published June 1, 2016 | Version v1
Journal article

Evaluation of microindentation properties of epitaxial 3C–SiC/Si thin films

  • 1. Department of Physics, Anna University, Chennai 600025 (India)
  • 2. UIST, St. Paul the Apostle, Ohrid 6000 (Macedonia, The Former Yugoslav Republic of)
  • 3. Crystal Growth Centre, Anna University, Chennai 600025 (India)

Description

The microhardness characteristics of 3C–SiC/Si films grown by vapor phase epitaxy were investigated using Vickers and Knoop indenters. The observed hardness behavior at lower load range is being attributed to indentation size effect while the substrate hardness effect is found to be prominent at higher loads. The related mechanical properties such as fracture toughness, brittleness index, and yield stress were also evaluated. In order to study the nature and behavior of the surface topography during the deformation process for the applied load, detailed atomic force microscopy images were obtained around the indented regions of the samples. It revealed that the indents formed at higher loads showed fracture characteristics with a pattern of radial cracks propagating from the indent corners.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2016.03.002

Additional details

Identifiers

DOI
10.1016/j.physb.2016.03.002;
PII
S0921-4526(16)30071-0;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
490
Journal Page Range
p. 86-89
ISSN
0921-4526
CODEN
PHYBE3

Optional Information

Copyright
Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.