Synthesis and characterization of plasmon resonant gold nanoparticles and graphene for photovoltaics
- 1. Institute of Methodology and of Plasmas, IMIP-CNR, Department of Chemistry, University of Bari, via Orabona, 4 70126 Bari (Italy)
Description
Here we discuss the use in solar cells of graphene grown by chemical vapor deposition (CVD) and of plasmonic gold nanoparticles (Au NPs) deposited by sputtering. The Au NPs have been coupled with a-Si heterojunction solar cells, with an organic active layer used in organic photovoltaics, and with graphene. Extensive characterization of those three systems by the optical technique of spectroscopic ellipsometry, which is suitable to monitor and analyze the plasmon resonance of the Au NPs, by the microstructural technique of Raman spectroscopy, which is suitable to analyze graphene properties and doping, and by atomic force microscopy has been carried out. Those techniques highlighted interactions between Au NPs and silicon, polymer and graphene, which lead to variation in the plasmon resonance of Au NPs and consequently in the characteristics of the Au NPs/Si, Au NPs/polymer and Au NPs/graphene hybrids. Specifically, we found that an optimal size and density of Au NPs are able to enhance the efficiency of c-Si/a-Si heterojunction solar cells and that exceeding with Au NPs size and density causes device shortcut because of interface interdiffusion between silicon and gold. To discuss organic photovoltaics, Au NPs have been combined with an electro-donating conjugated polymer, the poly[1,4bis(2-thienyl)-2,5-bis-(2-ethyl-hexyloxyphenylenes)]. We found that there is a strong correlation between the thickness and morphology of the organic active layer, which affects the energy and amplitude of the Au NPs plasmon resonance. Finally, Au NPs have been deposited on graphene. We found that Au NPs show the plasmon resonance in the region where graphene is transparent and also yield p-type doping of graphene decreasing its sheet resistance
Availability note (English)
Available from http://dx.doi.org/10.1016/j.mseb.2012.10.034Additional details
Identifiers
- DOI
- 10.1016/j.mseb.2012.10.034;
- PII
- S0921-5107(12)00540-5;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 178
- Journal Issue
- 9
- Journal Page Range
- p. 559-567
- ISSN
- 0921-5107
- CODEN
- MSBTEK
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45056547
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; DENSITY; ELLIPSOMETRY; GOLD; GRAPHENE; HETEROJUNCTIONS; MICROSTRUCTURE; MORPHOLOGY; NANOSTRUCTURES; PHOTOVOLTAIC EFFECT; POLYMERS; RAMAN SPECTROSCOPY; RESONANCE; SILICON; SOLAR CELLS; THICKNESS
- Descriptors DEC
- CARBON; CHEMICAL COATING; DEPOSITION; DIMENSIONS; DIRECT ENERGY CONVERTERS; ELEMENTS; EQUIPMENT; LASER SPECTROSCOPY; MEASURING METHODS; METALS; MICROSCOPY; NONMETALS; PHOTOELECTRIC CELLS; PHOTOELECTRIC EFFECT; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; SOLAR EQUIPMENT; SPECTROSCOPY; SURFACE COATING; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.