Published April 1, 2018
| Version v1
Journal article
A broadband high-efficiency Doherty power amplifier using symmetrical devices
- 1. Key Laboratory of RF Circuit and System, Education Ministry, Hangzhou Dianzi University, Hangzhou 310018 (China)
Description
This paper proposes a method for broadband and high-efficiency amplification of Doherty power amplifier (DPA) using symmetric devices. In order to achieve the perfect load modulation, the carrier amplifier output circuit total power length is designed to odd multiple of 90°, and the peak amplifier output total power length is designed to even multiple of 180°. The proposed method is demonstrated by designing a broadband high-efficiency DPA using identical 10-W packaged GaN HEMT devices. Measurement results show that over 51% drain efficiency is achieved at 6-dB back-off power, over the frequency band of 1.9–2.4 GHz. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/39/4/045004Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 39
- Journal Issue
- 4
- Journal Page Range
- [5 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51064604
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S42: ENGINEERING;
- Descriptors DEI
- ATOMIC DISPLACEMENTS; DESIGN; GALLIUM NITRIDES; GHZ RANGE; LENGTH; POWER AMPLIFIERS; SYMMETRY
- Descriptors DEC
- AMPLIFIERS; DIMENSIONS; ELECTRONIC EQUIPMENT; EQUIPMENT; FREQUENCY RANGE; GALLIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL RADIATION EFFECTS; PNICTIDES; RADIATION EFFECTS