Radiation defect formation in diode structures by electron irradiation at different rates

Use of irradiation techniques in modification of the parameters of semiconductor devices is gaining increasing acceptance. An important aspect in the development of radiation technology is the choice of the bombarding particles, their energy, irradiation temperature, and irradiation (dose) rate. The influence of the irradiation rate may depend on the radiation flux. There have been several experimental investigations of the influence of the irradiation rate don the formation of radiation defects mainly in high-resistivity silicon crystals characterized by ρ > 10 Ωx cm. However, there have been practically no investigations of this type on finished diode structures, which encouraged them to study the parameters of radiation defects in diffused diode structures bombarded with accelerated electrons using beams of different densities