Published September 21, 2009
| Version v1
Journal article
Selective liquid crystal molecule orientation on ion beam irradiated tantalum oxide ultrathin films
Creators
- 1. Department of Electrical and Electronic Engineering, Information Display Device Laboratory, Yonsei University, 134 Shinchon-Dong, Seodaemun-gu, Seoul 120-749 (Korea, Republic of)
- 2. Department of Electronic, Seoil University, Seoildaehak-gil 22, Jungnang-gu, Seoul 131-702 (Korea, Republic of)
- 3. Liquid Crystal Institute, Kent State University, Kent, Ohio 44242 (United States)
Description
We recently achieved the homogeneous alignment of liquid crystal (LC) on amorphous Ta2O5 layers. This study demonstrates that LC layers could be aligned either homogeneously or vertically by increasing the growth temperature of rf magnetron sputtering device and the irradiation time of the DuoPIGatron type Ar ion beam device causing uniform and dense plasma. We attained two LC orientations by observing Ta 4f and O 1s peak shifts with x-ray photoelectron spectroscopy. Moreover, the decreased thickness of layers with high-k dielectric constants helped to decrease driving LC voltages and in turn to achieve low power consumption.
Additional details
Identifiers
- DOI
- 10.1063/1.3232239;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 95
- Journal Issue
- 12
- Journal Page Range
- p. 123503-123503.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41040390
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AMORPHOUS STATE; ARGON IONS; CRYSTAL GROWTH; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; GRAIN ORIENTATION; ION BEAMS; LAYERS; LIQUID CRYSTALS; PERMITTIVITY; SPUTTERING; TANTALUM OXIDES; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- BEAMS; CHALCOGENIDES; CHARGED PARTICLES; CRYSTALS; DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; ELECTRON SPECTROSCOPY; FILMS; FLUIDS; IONS; LIQUIDS; MATERIALS; MICROSTRUCTURE; ORIENTATION; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; REFRACTORY METAL COMPOUNDS; SPECTROSCOPY; TANTALUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2009 American Institute of Physics