Optical anisotropy of strained quantum wells on high index substrates

We investigate anisotropic properties of strained InGaAs quantum wells on the high index (11n)A (n=3,4,5) GaAs substrates. The polarization dependence of photoluminescence of strained InGaAs quantum wells were measured, and optical anisotropy was observed. We calculated anisotropy of the optical transition matrix elements based on the 4 x 4 and 6 x 6 Luttinger model for the quantum wells with uniaxial strain. The calculated anisotropy taking into account of split-off band qualitatively agree with our experiment. This indicates that the band mixing of split-off band into the heavy-hole band largely contributes to the the optical anisotropy in the strained InGaAs quantum wells on the high index substrates. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)