Published March 2004
| Version v1
Journal article
Molecular-dynamics simulation of Si1-xGex epitaxial growth on Si(1 0
Creators
Description
Molecular dynamics study of the Si1-xGex epitaxial growth on Si(1 0 0) substrate utilizing the Stillinger-Weber two- and three-body interaction potentials was carried out. The Stranski-Krastanov growth mechanism of the Si1-xGex strain layers on Si(1 0 0) was studied and compared with experiment results. The influence of different x on the epitaxial growth layers morphology was investigated. The structure properties of the Si1-xGex layers were evaluated
Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2003.09.041;
- PII
- S0168583X03020159;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 217
- Journal Issue
- 1
- Journal Page Range
- p. 33-38
- ISSN
- 0168-583X
- CODEN
- NIMBEU
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Syrian Arab Republic
- INIS RN
- 35070997
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CRYSTAL GROWTH; EPITAXY; GERMANIUM; MOLECULAR DYNAMICS METHOD; POTENTIALS; SILICON; SIMULATION
- Descriptors DEC
- CALCULATION METHODS; CRYSTAL GROWTH METHODS; ELEMENTS; METALS; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.