Published October 1998
| Version v1
Journal article
Optimizing the Q value in three-dimensional metallic photonic band gap crystals
- 1. Microelectronics Research Center and Ames Laboratory-USDOE, Iowa State University, Ames, Iowa 50011 (United States)
Description
A metallic photonic band gap crystal with different defect structures is fabricated. The structure is designed and built to operate in the 8 - 26 GHz frequency range. Defects with sharp peaks in the transmission are created by removing portions of the metallic rods in a single defect layer. A high quality factor (Q) for the defect state is obtained by larger filling ratios and spatial separations between the unit cells. An optimized value of Q≥300 is found for three unit cell metallic photonic band gap structure. The experimental observations agree very well with theoretical calculations using the transfer matrix method. copyright 1998 American Institute of Physics
Additional details
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 84
- Journal Issue
- 8
- Journal Page Range
- p. 4091-4095
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 30001723
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CRYSTALS; DEFECTS; ENERGY GAP; LATTICE PARAMETERS; LAYERS; MICROWAVE RADIATION; QUALITY FACTOR; RODS; WAVE PROPAGATION
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; RADIATIONS