Published October 1998 | Version v1
Journal article

Optimizing the Q value in three-dimensional metallic photonic band gap crystals

  • 1. Microelectronics Research Center and Ames Laboratory-USDOE, Iowa State University, Ames, Iowa 50011 (United States)

Description

A metallic photonic band gap crystal with different defect structures is fabricated. The structure is designed and built to operate in the 8 - 26 GHz frequency range. Defects with sharp peaks in the transmission are created by removing portions of the metallic rods in a single defect layer. A high quality factor (Q) for the defect state is obtained by larger filling ratios and spatial separations between the unit cells. An optimized value of Q≥300 is found for three unit cell metallic photonic band gap structure. The experimental observations agree very well with theoretical calculations using the transfer matrix method. copyright 1998 American Institute of Physics

Additional details

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
84
Journal Issue
8
Journal Page Range
p. 4091-4095
ISSN
0021-8979
CODEN
JAPIAU

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
30001723
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CRYSTALS; DEFECTS; ENERGY GAP; LATTICE PARAMETERS; LAYERS; MICROWAVE RADIATION; QUALITY FACTOR; RODS; WAVE PROPAGATION
Descriptors DEC
ELECTROMAGNETIC RADIATION; RADIATIONS