Published 1989 | Version v1
Journal article Metadata-only

Strain effects induced by gold diffusion in silicon

Creators

  • 1. Linkoeping Univ. (Sweden). Dept. of Physics and Measurement Technology
  • 2. Khartoum Univ. (Sudan)

Description

Gold diffusion in P-doped float-zone Si is studied in a large temperature (TD) range. For TD ≤ 750oC the Au acceptor level is observed by DLTS (Deep Level Transient Spectroscopy). For TD ≥ 800oC, photoluminescence (PL) data suggest that Au-related precipitates are predominantly formed. These precipitates introduce inhomogeneous internal stress which causes line shifts and broadenings of the free exciton, phosphorus bound exciton and electron-hole droplet PL emissions. Substitutional phosphorus concentration decreases with increasing Au diffusion temperature. (author) 16 refs., 4 figs

Additional details

Publishing Information

Journal Title
Materials Science Forum
Journal Volume
38-41
Series
Mater. Sci. Forum.
Journal Page Range
747-751
ISSN
0255-5476
CODEN
MSFOE

Conference

Title
15. International conference on defects in semiconductors (ICDS-15).
Dates
22-26 Aug 1988.
Place
Budapest (Hungary).

INIS

Country of Publication
Switzerland
Country of Input or Organization
Switzerland
INIS RN
20062136
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CRYSTAL DOPING; DEFORMATION; DIFFUSION; DISLOCATIONS; ENERGY LEVELS; EXCITONS; GOLD; HOLES; IMPURITIES; INTERSTITIALS; PHONONS; PHOSPHORUS; PHOTOLUMINESCENCE; PRECIPITATION; SILICON; SPECTROSCOPY; STRAINS; STRESSES; TEMPERATURE DEPENDENCE
Descriptors DEC
CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; EMISSION; LINE DEFECTS; LUMINESCENCE; METALS; NONMETALS; PHOTON EMISSION; POINT DEFECTS; QUASI PARTICLES; SEMIMETALS; SEPARATION PROCESSES; TRANSITION ELEMENTS