Published 2015 | Version v1
Journal article

Effect of disorder on the metal-insulator transition of vanadium oxides: Local versus global effects

  • 1. 1Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, California 92093 (United States)
  • 2. Materials Science and Engineering Program, University of California San Diego, La Jolla, California 92093, (United States)
  • 3. Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, California 92093, (United States)
  • 4. Universite Paris Sud 11, 91405 Orsay, (France)
  • 5. Unite Mixte de Physique CNRS/Thales, 1 avenue A Fresnel, 91767 Palaiseau, (France)
  • 6. LPEM, CNRS-ESPCI, 10 rue Vauquelin, 75231 Paris, (France)
  • 7. CEA, DEN, Service de Recherches de Metallurgie Physique, F-91191 Gif-sur-Yvette, (France)

Description

In this paper we investigate the effect of disorder on highly correlated electron systems, which exhibit metal-insulator transition (MIT) and structural-phase transition (SPT). We show that the effect of ion irradiation is strikingly different between V2O3 and VO2, two otherwise similar materials. Upon irradiation, the MIT and SPT temperatures in V2O3 decrease drastically at low absolute dosages, much lower than for VO2. At a low threshold dose, the insulating state of V2O3 drastically collapses into a metallic state. Contrary to this, irradiation of VO2 leads to a much milder reduction of the MIT and SPT temperatures and to a weak, gradual decrease of the insulating state resistivity-not suppressed even at one order of magnitude higher doses than the V2O3 threshold. These major differences imply that the phase transition in V2O3 arises from global (rather than local as in VO2) physical mechanisms that are extremely sensitive to disorder. This shows that the MIT and SPT may have substantially different physical origins in different systems, with the consequent major implications for theoretical descriptions of the MIT in highly correlated electron systems. (authors)

Availability note (English)

Available from doi: http://dx.doi.org/10.1103/PhysRevB.91.205123

Additional details

Identifiers

Publishing Information

Journal Title
Physical Review B
Journal Volume
91
Journal Page Range
p. 205123.1-205123.5
ISSN
2469-9950

Optional Information

Notes
32 refs.