Published April 2009 | Version v1
Journal article

Studies of conduction mechanisms in a heavily Co-doped n-TiNiSn intermetallic semiconductor

  • 1. Institute of Applied Problems of Mechanics and Mathematics, L'viv (Ukraine)
  • 2. National University 'L'vyivs'ka polyitekhnyika', L'viv (Ukraine)
  • 3. L'viv National University, L'viv (Ukraine)
  • 4. Laboratory of Neel of the National Centre of Scientific Research, Grenoble (France)

Description

Temperature dependences of the specific electroresistance, Seeback coefficient, and structural characteristics of a heavily Co doped n-TiNiSn intermetallic semiconductor, TiNi-1-xCoxSn, have been studied in the temperature range T=80/380 K. The corresponding electron density of states has been calculated. Co atoms at concentrations x< 0.03, were found to occupy the crystallographic positions of Ti and Ni ones with different occupation numbers and act as defects of the donor or acceptor nature, respectively

Additional details

Additional titles

Original title (Ukrainian)
Doslyidzhennya provyidnostyi yintermetalyichnogo napyivprovyidnika n-TiNiSn, sil'nolegovanogo domyishkoyu Co

Publishing Information

Journal Title
Ukrayins'kij Fyizichnij Zhurnal (Kyiv)
Journal Volume
54
Journal Issue
no.4
Journal Page Range
p. 371-376
ISSN
0372-400X