Published December 1987
| Version v1
Journal article
The nature of the deep hole trap in MOS oxides
Description
The authors investigated hole and electron trapping events E' deep hole traps in metal-oxide-semiconductor oxides. Using a sequence of ultraviolet irradiations, electron spin resonance measurements, and capacitance versus voltage measurements, the authors obtained results which are completely consistent with a simple oxygen vacancy model for the hole trap. However, their results are inconsistent with the bond strain gradient model proposed by others
Additional details
Publishing Information
- Journal Title
- IEEE Trans. Nucl. Sci.
- Journal Volume
- NS-34
- Journal Issue
- 6
- Series
- IEEE Trans. Nucl. Sci.
- Journal Page Range
- 1147-1151
- ISSN
- 0018-9499
- CODEN
- IETNA
Conference
- Title
- Annual conference on nuclear and space radiation effects.
- Dates
- 28-31 Jul 1987.
- Place
- Snowmass Village, CO (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 19085759
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S42: ENGINEERING;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CAPACITANCE; ELECTRON SPIN RESONANCE; ELECTRONS; IRRADIATION; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS; TRAPPED-PARTICLE INSTABILITY; ULTRAVIOLET RADIATION; VOLTAMETRY
- Descriptors DEC
- ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; FERMIONS; INSTABILITY; LEPTONS; MAGNETIC RESONANCE; PHYSICAL PROPERTIES; PLASMA INSTABILITY; PLASMA MACROINSTABILITIES; RADIATION EFFECTS; RADIATIONS; RESONANCE; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Secondary number(s)
- CONF-8707112--.