Published 2001
| Version v1
Report
Main mechanisms of proton-stimulated diffusion of impurities in silicon
Description
no abstract available
Availability note (English)
Available from British Library Document Supply Centre- DSC:9023.190(9910)TAdditional details
Publishing Information
- Imprint Pagination
- 5 p.
- Report number
- VR-Trans--9910
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 32030753
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Translation, Non-conventional Literature, No Abstract
- Descriptors DEI
- CRYSTAL DOPING; DIFFUSION; IMPURITIES; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; SILICON
- Descriptors DEC
- BEAMS; ELEMENTS; NUCLEON BEAMS; PARTICLE BEAMS; RADIATION EFFECTS; SEMIMETALS
Optional Information
- Notes
- Translated from Russian (Fiz. Khim. Obrab. Mater. 1998 (3) p. 17-20)