Published August 1, 1986 | Version v1
Journal article Metadata-only

Progress in semiconductor drift detectors

Creators

  • 1. Brookhaven National Lab., Upton, NY (USA)
  • 2. Lawrence Berkeley Lab., CA (USA)
  • 3. Politecnico di Milano (Italy). Dipartimento di Elettronica
  • 4. Technische Univ. Muenchen, Garching (Germany, F.R.). Fakultaet fuer Physik
  • 5. Max-Planck-Institut fuer Physik und Astrophysik, Muenchen (Germany, F.R.)
  • 6. Fachhochschule des Saarlandes, Saarbruecken (Germany, F.R.)

Description

Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements. (orig.)

Additional details

Publishing Information

Journal Title
Nucl. Instrum. Methods Phys. Res., Sect. A
Journal Volume
248
Journal Issue
2/3
Series
Nucl. Instrum. Methods Phys. Res., Sect. A.
Journal Page Range
367-378
ISSN
0168-9002
CODEN
NIMAE

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
17089830
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
COUNTING CIRCUITS; ELECTRIC FIELDS; ENERGY RESOLUTION; GEV RANGE 10-100; LOW TEMPERATURE; MEDIUM TEMPERATURE; PION DETECTION; POSITION SENSITIVE DETECTORS; RELATIVISTIC RANGE; SEMICONDUCTOR DETECTORS; SI SEMICONDUCTOR DETECTORS; SPATIAL RESOLUTION; X-RAY SPECTROSCOPY
Descriptors DEC
DETECTION; ELECTRONIC CIRCUITS; ENERGY RANGE; GEV RANGE; MEASURING INSTRUMENTS; RADIATION DETECTION; RADIATION DETECTORS; RESOLUTION; SPECTROSCOPY