Published January 3, 2005
| Version v1
Journal article
320x256 solar-blind focal plane arrays based on AlxGa1-xN
- 1. Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208 (United States)
Description
We report AlGaN-based backilluminated solar-blind ultraviolet focal plane arrays operating at a wavelength of 280 nm. The electrical characteristics of the individual pixels are discussed, and the uniformity of the array is presented. The p-i-n photodiode array was hybridized to a 320x256 read-out integrated circuit entirely within our university research lab, and a working 320x256 camera was demonstrated. Several example solar-blind images from the camera are also provided
Additional details
Identifiers
- DOI
- 10.1063/1.1846936;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 86
- Journal Issue
- 1
- Journal Page Range
- p. 011117-011117.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36080130
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM NITRIDES; CAMERAS; ELECTRIC CONDUCTIVITY; GALLIUM NITRIDES; INTEGRATED CIRCUITS; LEAKAGE CURRENT; PHOTODIODES; READOUT SYSTEMS; SEMICONDUCTOR MATERIALS; THIN FILMS; ULTRAVIOLET RADIATION
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CURRENTS; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELECTRONIC CIRCUITS; FILMS; GALLIUM COMPOUNDS; MATERIALS; MICROELECTRONIC CIRCUITS; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES
Optional Information
- Notes
- (c) 2005 American Institute of Physics