Published February 1990
| Version v1
Journal article
Gold redistribution in silicon near the interface region Si-SiO2 during electron irradiation
- 1. AN SSSR, Novosibirsk (USSR). Inst. Fiziki Poluprovodnikov
Description
Deep level transient spectroscopy was applied to analyze the influence of surface state on the gold redistribution in near interface region of Si-SiO2 under electron irradiation. It is established that in the system Si-thermal SiO2 under irradiation gold atoms are displaced in the interstitial position and diffuse to the interface Si-SiO2, where they accumulate in the region 0.5 μm
Additional details
Additional titles
- Original title (Russian)
- Перераспределение атомов золота в кремнии вблизи границ раздела Си-SiO
Publishing Information
- Journal Title
- Poverkhnost': Fizika, Khimiya, Mekhanika
- Journal Issue
- no.2
- Series
- Poverkhn.: Fiz., Khim., Mekh.
- CODEN
- PFKMD
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 22042357
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DIFFUSION; ELECTRON BEAMS; GOLD ADDITIONS; INTERFACES; MEV RANGE 01-10; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS; SILICON; SILICON OXIDES; SURFACE PROPERTIES
- Descriptors DEC
- BEAMS; CHALCOGENIDES; ELEMENTS; ENERGY RANGE; LEPTON BEAMS; MEV RANGE; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; RADIATION EFFECTS; SEMIMETALS; SILICON COMPOUNDS