Excitation kinetics of impurity doped quantum dot driven by Gaussian white noise: Interplay with external field
- 1. Department of Chemistry, Hetampur Raj High School, Hetampur, Birbhum 731124, West Bengal (India)
- 2. Department of Chemistry and Biochemistry, Jackson State University, Mississippi, MS 39217-0510 (United States)
- 3. Department of Chemistry, Brahmankhanda Basapara High School, Basapara, Birbhum 731215, West Bengal (India)
- 4. Department of Chemistry, Physical Chemistry Section, Visva Bharati University, Santiniketan, Birbhum 731 235, West Bengal (India)
Description
Highlights: • The excitation kinetics of impurity doped quantum dot has been investigated. • The dot is subject to Gaussian white noise. • External oscillatory field is also applied. • Noise strength and field intensity fabricate the kinetics. • Role of dopant location has also been analyzed. - Abstract: We investigate the excitation kinetics of a repulsive impurity doped quantum dot initiated by simultaneous application of Gaussian white noise and external sinusoidal field. We have considered both additive and multiplicative noise (in Stratonovich sense). The combined influences of noise strength (ζ) and the field intensity (∊) have been capsuled by invoking their ratio (η). The said ratio and the dopant location have been found to fabricate the kinetics in a delicate way. Moreover, the influences of additive and multiplicative nature of the noise on the excitation kinetics have been observed to be widely different. The investigation reveals emergence of maximization/minimization and saturation in the excitation kinetics as a result of complex interplay between η and the dopant coordinate (r0). The present investigation is believed to provide some useful insights in the functioning of mesoscopic devices where noise plays some significant role
Availability note (English)
Available from http://dx.doi.org/10.1016/j.chemphys.2013.10.005Additional details
Identifiers
- DOI
- 10.1016/j.chemphys.2013.10.005;
- PII
- S0301-0104(13)00378-9;
Publishing Information
- Journal Title
- Chemical Physics
- Journal Volume
- 426
- Journal Page Range
- p. 54-58
- ISSN
- 0301-0104
- CODEN
- CMPHC2
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45103754
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS;
- Descriptors DEI
- DOPED MATERIALS; EXCITATION; IMPURITIES; QUANTUM DOTS
- Descriptors DEC
- ENERGY-LEVEL TRANSITIONS; MATERIALS; NANOSTRUCTURES
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.