Published April 2012
| Version v1
Journal article
Unipolar resistance switching characteristics in a thick ZnO/Cu/ZnO multilayer structure
Creators
- 1. Vietnam National University - HoChiMinh City (Viet Nam)
- 2. University of Technical Education, HoChiMinh City (Viet Nam)
- 3. Inha University, Incheon (Korea, Republic of)
- 4. Sungkyunkwan University, Suwon (Korea, Republic of)
Description
The resistance switching mechanism and the electrical conduction of thick Cu/ZnO/Cu/ZnO/Cu structures were investigated for various ZnO thicknesses (40, 80, 160, and 320 nm) when the thickness of the middle Cu layer was 2 nm. The ZnO films had a microstructure with columnar grains normal to the substrate. The switching voltages (VSET and VRESET) varied with the thickness of the ZnO layer. A symmetric electrode structure exhibited a unipolar resistance switching. The electrical transport of both high-resistance state (HRS) and low-resistance state (LRS) was Ohmic conduction, and the resistance switching mechanism was driven by the formation and the rupture of Cu conducting paths.
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 60
- Journal Issue
- 7
- Series
- 18 refs, 8 figs
- Journal Page Range
- p. 1087-1091
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 45050614
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- COPPER; ELECTRIC CONDUCTIVITY; LAYERS; MEMORY DEVICES; MICROSTRUCTURE; SCANNING ELECTRON MICROSCOPY; SPUTTERING; THIN FILMS; X-RAY DIFFRACTION; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ELEMENTS; FILMS; METALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SCATTERING; TRANSITION ELEMENTS; ZINC COMPOUNDS