Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature
Creators
- 1. Nanophotonics Center/OES, Industrial Technology Research Institute, Hsinchu 310, Taiwan (China)
- 2. Department of Physics, National Central University, Chung-Li 32054, Taiwan (China)
- 3. Department of Physics, National Tsing-Hua University, Hsinchu 300, Taiwan (China)
Description
High-quality InN epitaxial films have been grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a double-buffer technique. Growth of a (0001)-oriented single crystalline wurtzite-InN layer was confirmed by reflection high-energy electron diffraction, x-ray diffraction, and Raman scattering. At room temperature, these films exhibited strong near-infrared (0.6-0.9 eV) photoluminescence (PL). In addition to the optical absorption measurement of absorption edge and direct band nature, the PL signal was found to depend linearly on the excitation laser intensity over a wide intensity range. These results indicate that the observed PL is due to the emission of direct band-to-band recombination rather than the band-to-defect (or impurity) deep emission
Additional details
Identifiers
- DOI
- 10.1063/1.1738183;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 84
- Journal Issue
- 19
- Journal Page Range
- p. 3765-3767
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36047684
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION; ELECTRON DIFFRACTION; EXCITATION; IMPURITIES; INDIUM NITRIDES; INFRARED SPECTRA; LAYERS; MILLI EV RANGE; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; NITROGEN; PHOTOLUMINESCENCE; RAMAN EFFECT; RAMAN SPECTRA; RECOMBINATION; REFLECTION; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTALS; DIFFRACTION; ELEMENTS; EMISSION; ENERGY RANGE; ENERGY-LEVEL TRANSITIONS; EPITAXY; FILMS; INDIUM COMPOUNDS; LUMINESCENCE; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PHOTON EMISSION; PNICTIDES; SCATTERING; SORPTION; SPECTRA; TEMPERATURE RANGE
Optional Information
- Notes
- (c) 2004 American Institute of Physics.