Anomalous variations of properties of indium arsenide monocrystals doped with tellurium

Change of basic indium arsenide parameters with tellurium introduction is considered beginning from the cases of low alloying up to concentrations corresponding to limiting solubility. The analysis of experimental data shows that a functional dependence of a forbidden band width, the Fermi energy, background absorption value, and a parameter characterizing carrier scattering mechanism on electron concentration has a discontinuity at N=(3-5)x1018 cm-3. The discovered phenomenon is explained by a redistribution of atoms of system componenets between sublattices with the ordered phase formation