Published July 15, 2013 | Version v1
Journal article Metadata-only

Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing

Creators

  • 1. Institute for Physics of Microstructures RAS, GSP-105, Nizhniy Novgorod (Russian Federation)
  • 2. Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany)
  • 3. Institute of Physics, Martin Luther University Halle-Wittenberg, Von-Danckelmann-Platz 3 D-01620, Halle (Saale) (Germany)
  • 4. ZIK SiLi-Nano, Martin Luther University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3 D-06120, Halle (Saale) (Germany)

Description

A study of the bandgap character of compressively strained GeSn0.060-0.091/Ge(001) quantum wells grown by molecular beam epitaxy is reported. The built-in strain in GeSn wells leads to an increased separation between L and Γ conduction band minima. The prevalent indirect interband transitions in GeSn were probed by photoluminescence spectroscopy. As a result we could simulate the L-valley bowing parameter in GeSn alloys, bL = 0.80 ± 0.06 eV at 10 K. From this we conclude that even compressively strained GeSn/Ge(001) alloys could become direct band gap semiconductors at the Sn-fraction higher than 17.0 at. %

Additional details

Identifiers

DOI
10.1063/1.4813913;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
103
Journal Issue
3
Journal Page Range
p. 032106-032106.5
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44078620
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ALLOYS; ENERGY GAP; ENERGY-LEVEL TRANSITIONS; GERMANIUM; GERMANIUM COMPOUNDS; LAYERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; STRAINS; TIN COMPOUNDS
Descriptors DEC
CRYSTAL GROWTH METHODS; ELEMENTS; EMISSION; EPITAXY; LUMINESCENCE; MATERIALS; METALS; NANOSTRUCTURES; PHOTON EMISSION

Optional Information

Notes
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