Published November 6, 2012 | Version v1
Journal article

Nuclear radiation detectors based on a matrix of ion-implanted p-i-n diodes on undoped GaAs epilayers

  • 1. National University of Science and Technology «MISIS», Leninskiy prospect 4, 119049 Moscow (Russian Federation)
  • 2. P.N. Lebedev Physical Institute of the RAS, Leninskiy prospect 53, 119991 Moscow (Russian Federation)
  • 3. Institute for High Energy Physics, Polshhad nauki 1, 142281 Protvino (Russian Federation)

Description

Samples of nuclear detectors which represent matrices of p-i-n diodes were fabricated based on undoped gallium arsenide epitaxial layers by ion implantation technology. The detectors have a size of the active area of 0.4×0.4 and 0.9×0.9 cm2. Electrical characteristics of fabricated detectors and results of measurements of fast neutrons spectra of 241Am-Be source by the recoil protons method are discussed.

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1496
Journal Issue
1
Journal Page Range
p. 50-53
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
19. international conference on ion implantation technology
Dates
25-29 Jun 2012
Place
Valladolid (Spain)

Optional Information

Notes
(c) 2012 American Institute of Physics