Published December 2, 2013 | Version v1
Journal article

Cd1−xZnxS thin films with low Zn content obtained by an ammonia-free chemical bath deposition process

  • 1. Centro de Investigación y de Estudios Avanzados del IPN, Unidad Saltillo, Av. Industria Metalúrgica 1062, CP. 25900, Ramos Arizpe, Coah., México (Mexico)
  • 2. Centro de Investigación y de Estudios Avanzados del IPN, Unidad Querétaro, Apartado Postal 1-798, CP. 76001 Querétaro, Qro., México (Mexico)

Description

Cd1−xZnxS films with low Zn content were obtained on glass substrates by an ammonia-free chemical bath deposition process. Alkaline reaction solutions were prepared using cadmium chloride, zinc chloride, sodium citrate, thiourea and potassium hydroxide. As a result of varying the mixture ratio between Cd and Zn precursors, microstructural studies from X-ray diffraction reveal that the resulting films have hexagonal, wurzite type, crystalline structure with changes in the preferential growth orientation. Important changes on the surface morphology and thickness of the Cd1−xZnxS films were also observed as effects of adding Zn to the CdS lattice. Optical studies show that Cd1−xZnxS thin films with energy band gaps in the range from 2.48 to 2.65 eV were obtained. - Highlights: • Cd1−xZnxS layers were grown on glass by ammonia-free chemical bath deposition • Films with low Zn content were obtained using reaction solutions with pH11.5 • Zn addition produced changes on the orientation growth and morphology of the films • Cd1−xZnxS films have energy band gap values from 2.48 to 2.65 eV

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2013.10.024

Additional details

Identifiers

DOI
10.1016/j.tsf.2013.10.024;
PII
S0040-6090(13)01625-8;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
548
Journal Page Range
p. 270-274
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.