Published 1989
| Version v1
Miscellaneous
Radiative properties dependence of ZnSe films on Si substrate orientation
Creators
Description
ZnSe films are grown on Si substrates. Their photoluminescence at 77 and 300 K is studied. Radiative properties dependence of ZnSe films on Si substrate orientation is detected. 6 refs.; 2 figs
Additional details
Additional titles
- Original title (Russian)
- Зависимост' излучательных свойств пленок ZnSe на Си от ориентации подложки
Publishing Information
- Imprint Title
- Experimental and theoretical physics
- Imprint Pagination
- 53 p.
- Journal Issue
- no.5
- Series
- Kratkie soobshcheniya po fizike.
- Journal Page Range
- p. 45-46.
- Report number
- INIS-SU--227
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 22020241
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- EPITAXY; LOW TEMPERATURE; MEDIUM TEMPERATURE; ORIENTATION; PHOTOLUMINESCENCE; SILICON; SUBSTRATES; THIN FILMS; ULTRAVIOLET RADIATION; ZINC SELENIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELEMENTS; EMISSION; FILMS; LUMINESCENCE; PHOTON EMISSION; RADIATIONS; SELENIDES; SELENIUM COMPOUNDS; SEMIMETALS; ZINC COMPOUNDS
Optional Information
- Notes
- Imprint:Ehksperimental'naya i teoreticheskaya fizika.;Sbornik.