Correlation between measured voltage and observed wavelength in commercial AlGaInP laser diode
- 1. Faculty of Physics, University of Belgrade, 11000 Belgrade (Serbia)
Description
Temperature of a commercial AlGaInP/GaInP quantum well laser diode (LD) is measured using two methods: peak wavelength shift and the diode voltage drop caused by working current. Time evolutions of temperature obtained by the two methods during the LD self-heating are measured and compared. No significant difference between the thus obtained temperature evolutions is obtained. Correlation between the LD voltage drop and the laser radiation frequency is established using a simple four-level semiconductor laser scheme and the LD gap energy is estimated. The LD gap energy decreases from 1.66 eV to 1.56 eV for temperature increase of 21 K, at close to room temperature. It is found that LD's frequency decrease is caused by the gap energy decrease
Additional details
Identifiers
- DOI
- 10.1063/1.4876747;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 115
- Journal Issue
- 18
- Journal Page Range
- p. 183102-183102.9
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45097178
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ALUMINIUM COMPOUNDS; COMPARATIVE EVALUATIONS; CORRELATIONS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ENERGY GAP; GALLIUM COMPOUNDS; HETEROJUNCTIONS; INDIUM PHOSPHIDES; LASER RADIATION; QUANTUM WELLS; SEMICONDUCTOR LASERS; VOLTAGE DROP
- Descriptors DEC
- CURRENTS; ELECTROMAGNETIC RADIATION; EVALUATION; INDIUM COMPOUNDS; LASERS; NANOSTRUCTURES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SOLID STATE LASERS
Optional Information
- Notes
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