Published November 2004
| Version v1
Journal article
Anisotropy of resonant inelastic X-ray scattering at the K edge of Si: theoretical analysis
- 1. Japan Atomic Energy Research Inst., Synchrotron Radiation Research Center, Mikazuki, Hyogo (Japan)
- 2. Ibaraki Univ., Faculty of Science, Mito, Ibaraki (Japan)
Description
We investigate theoretical the resonant inelastic X-ray scattering (RIXS) at the K edge of Si on the basis of an ab initio calculation. We calculate the RIXS spectra with systematically varying transferred-momenta, incident-photon energy and incident-photon polarization. We confirm the anisotropy of the experimental spectra by Y. Ma et al. [Phys. Rev. Lett. 74 (1995) 478], providing a quantitative explanation of the spectra. (author)
Additional details
Publishing Information
- Journal Title
- Journal of the Physical Society of Japan
- Journal Volume
- 73
- Journal Issue
- 11
- Journal Page Range
- p. 3171-3176
- ISSN
- 0031-9015
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 36027223
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANISOTROPY; BAND THEORY; COMPUTER CALCULATIONS; ENERGY SPECTRA; INELASTIC SCATTERING; PHOTONS; POLARIZATION; RESONANCE SCATTERING; SILICON; X-RAY DIFFRACTION
- Descriptors DEC
- BOSONS; COHERENT SCATTERING; DIFFRACTION; ELEMENTARY PARTICLES; ELEMENTS; INELASTIC SCATTERING; MASSLESS PARTICLES; SCATTERING; SEMIMETALS; SPECTRA
Optional Information
- Notes
- 9 refs., 11 figs.