Published December 2003
| Version v1
Book
Post-implantation oxide passivated 8-element Si detector array
Creators
- 1. Nuclear Radiation Detector Section, Technical Physics and Prototype Engineering Div., Bhabha Atomic Research Centre, Mumbai (India)
Description
Silicon detector array consisting of 8 nos. of elemental detectors with spacing of 0.5 mm was fabricated by ion implantation technique. Suitability of its use for determining the position and/or energy of short-range charged particles has also been evaluated
Additional details
Publishing Information
- Publisher
- Bhabha Atomic Research Centre
- Imprint Place
- Mumbai (India)
- Imprint Title
- DAE-BRNS symposium on nuclear physics: contributed papers. V. 46B
- Imprint Pagination
- 642 p.
- Journal Page Range
- p. 448-449
Conference
- Title
- 46. DAE-BRNS symposium on nuclear physics
- Dates
- 8-12 Dec 2003
- Place
- Mumbai (India)
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 36091441
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALPHA PARTICLES; AMERICIUM; BREAKDOWN; ION IMPLANTATION; PASSIVITY; PERFORMANCE; PLUTONIUM; SI SEMICONDUCTOR DETECTORS
- Descriptors DEC
- ACTINIDES; CHARGED PARTICLES; ELEMENTS; IONIZING RADIATIONS; MEASURING INSTRUMENTS; METALS; RADIATION DETECTORS; RADIATIONS; SEMICONDUCTOR DETECTORS; TRANSPLUTONIUM ELEMENTS; TRANSURANIUM ELEMENTS
Optional Information
- Notes
- 1 ref., 3 figs., 1 tab.