Elastic properties and intrinsic strength of two-dimensional InSe flakes
Creators
- 1. State Key Laboratory of Mechanics and Control of Mechanical Structures, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, Jiangsu (China)
- 2. Department of Mechanical Engineering, Clemson University, Clemson, SC, 29634-0921 (United States)
- 3. Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, Guangdong (China)
- 4. Institute of Biomedicine and Biotechnology, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, Guangdong (China)
- 5. School of Physics Science and Technology, Xinjiang University, Urumqi 830046, Xinjiang (China)
Description
The mechanical properties of two-dimensional (2D) materials are critical for their applications in functional devices as well as for strain engineering. Here, we report the Young's modulus and breaking strength of multilayered InSe, an emerging 2D semiconductor of the layered group III chalcogenide. Few-layer InSe flaks were exfoliated from bulk InSe crystal onto Si/SiO2 substrate with micro-fabricated holes, and indentation tests were carried out using an atomic force microscopy probe. In combination with both continuum analysis and finite element simulation, we measured the Young's modulus of multilayer 2D InSe (>5 L) to be 101.37 ± 17.93 GPa, much higher than its bulk counterpart, while its breaking strength is determined to be 8.68 GPa, approaching the theoretical limit of 10.1 GPa. Density functional theory calculations were also carried out to explain the insensitivity of Young's modulus to the layer count. It is found that 2D InSe is softer than most 2D materials, and exhibits breaking strength higher than that of carbon fiber, yet remaining more compliant, making it ideal for flexible electronics applications. The reliability of our method is also validated by measurement of graphene. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6528/ab1a96Additional details
Identifiers
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 30
- Journal Issue
- 33
- Journal Page Range
- [10 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51054084
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; CARBON FIBERS; CRYSTALS; DENSITY FUNCTIONAL METHOD; ELASTICITY; FINITE ELEMENT METHOD; GRAPHENE; HOLES; INDIUM SELENIDES; PRESSURE RANGE GIGA PA; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; STRAINS; TWO-DIMENSIONAL SYSTEMS; YOUNG MODULUS
- Descriptors DEC
- CALCULATION METHODS; CARBON; CHALCOGENIDES; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELEMENTS; FIBERS; INDIUM COMPOUNDS; MATERIALS; MATHEMATICAL SOLUTIONS; MECHANICAL PROPERTIES; MICROSCOPY; NONMETALS; NUMERICAL SOLUTION; OXIDES; OXYGEN COMPOUNDS; PRESSURE RANGE; SELENIDES; SELENIUM COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS; VARIATIONAL METHODS