Electrophysical properties of fine graded-gap Cdsub(x)Hgsub(1-x)Te structures

Described are methods determining some electrophysical parameters of homogeneous cross sections relative to fine (less than 30 μm) graded-gap Cdsub(x)Hgsub(1-x)Te-based structures of p and n types. Thicknesses of the structures were determined by the slanting microsection using a metallographic microscope and X-ray microanalyzer. Electric conductivity and the Hall effect were measured by the Van-der-Pau method the temperature range of 77-300 K. The depth of acceptor and donor levels for homogeneous cross sections was determined by the results of measurements along with the value of width of forbidden zone by the depth of graded-gap structures. A good agreement of the results obtained on the basis of halvanomagnetic measurements with those of X-ray microanalyzer