Published December 5, 2006
| Version v1
Journal article
Radio frequency plasma nitriding of aluminium at higher power levels
- 1. Ian Wark Research Institute, ARC Special Research Centre for Particle and Material Interfaces, University of South Australia, Mawson Lakes, South Australia 5095 (Australia) and CSIRO Manufacturing and Infrastructure Technology, P.O. Box 4, Woodville, South Australia 5011 (Australia)
- 2. Ian Wark Research Institute, ARC Special Research Centre for Particle and Material Interfaces, University of South Australia, Mawson Lakes, South Australia 5095 (Australia)
- 3. Applied Centre for Structural and Synchrotron Studies, University of South Australia, Mawson Lakes, South Australia 5095 (Australia)
- 4. CSIRO Manufacturing and Infrastructure Technology, P.O. Box 4, Woodville, South Australia 5011 (Australia)
Description
Nitriding of aluminium 2011 using a radio frequency plasma at higher power levels (500 and 700 W) and lower substrate temperature (500 deg. C) resulted in higher AlN/Al2O3 ratios than obtained at 100 W and 575 deg. C. AlN/Al2O3 ratios derived from X-ray photoelectron spectroscopic analysis (and corroborated by heavy ion elastic recoil time of flight spectrometry) for treatments preformed at 100 (575 deg. C), 500 (500 deg. C) and 700 W (500 deg. C) were 1.0, 1.5 and 3.3, respectively. Scanning electron microscopy revealed that plasma nitrided surfaces obtained at higher power levels exhibited much finer nodular morphology than obtained at 100 W
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2006.04.031;
- PII
- S0040-6090(06)00560-8;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 515
- Journal Issue
- 4
- Journal Page Range
- p. 1480-1485
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38058112
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM ALLOYS; ALUMINIUM NITRIDES; ALUMINIUM OXIDES; RADIOWAVE RADIATION; SCANNING ELECTRON MICROSCOPY; TEMPERATURE RANGE 0400-1000 K; TIME-OF-FLIGHT METHOD; X RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- ALLOYS; ALUMINIUM COMPOUNDS; CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; IONIZING RADIATIONS; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PNICTIDES; RADIATIONS; SPECTROSCOPY; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.