Published September 1988 | Version v1
Report Restricted

Radiation resistance and comparative performance of ITO/InP and n/p InP homojunction solar cells

Creators

Description

The radiation resistance of ITO/InP cells processed by DC magnetron sputtering is compared to that of standard n/p InP and GaAs homojunction cells. After 20 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistance significantly greater than GaAs. The relatively lower radiation resistance, observed at higher fluence, for the InP cell with the deepest junction depth, is attributed to losses in the cells emitter region. Diode parameters obtained from I sub sc - V sub oc plots, data from surface Raman spectroscopy, and determinations of surface conductivity types are used to investigate the configuration of the ITO/InP cells. It is concluded that thesee latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide semiconductor

Availability note (English)

MF available from INIS under the Report Number; Available from NTIS, PC A03/MF A01.

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Additional details

Publishing Information

Imprint Pagination
11 p.
Report number
N--89-12819

Conference

Title
20. IEEE photovoltaic specialists conference.
Dates
26-30 Sep 1988.
Place
Las Vegas, NV (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
20036716
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
EXPERIMENTAL DATA; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; RAMAN SPECTROSCOPY; SOLAR CELLS; SPUTTERING
Descriptors DEC
BEAMS; DATA; DIRECT ENERGY CONVERTERS; ELECTRONIC EQUIPMENT; EQUIPMENT; INFORMATION; LASER SPECTROSCOPY; NUCLEON BEAMS; NUMERICAL DATA; PARTICLE BEAMS; RADIATION EFFECTS; SPECTROSCOPY

Optional Information

Secondary number(s)
NASA-TM--101387; E--4447; NAS--1.15:101387; CONF-880965--.