Soft error rate analysis methodology of multi-Pulse-single-event transients
Creators
- 1. Information and Communication Engineering, Harbin Institute of Technology, Harbin (China)
- 2. Microelectronics Center, Harbin Institute of Technology, Harbin (China)
Description
As transistor feature size scales down, soft errors in combinational logic because of high-energy particle radiation is gaining more and more concerns. In this paper, a combinational logic soft error analysis methodology considering multi-pulse-single-event transients (MPSETs) and re-convergence with multi transient pulses is proposed. In the proposed approach, the voltage pulse produced at the standard cell output is approximated by a triangle waveform, and characterized by three parameters: pulse width, the transition time of the first edge, and the transition time of the second edge. As for the pulse with the amplitude being smaller than the supply voltage, the edge extension technique is proposed. Moreover, an efficient electrical masking model comprehensively considering transition time, delay, width and amplitude is proposed, and an approach using the transition times of two edges and pulse width to compute the amplitude of pulse is proposed. Finally, our proposed firstly-independently-propagating-secondly-mutually-interacting (FIP-SMI) is used to deal with more practical re-convergence gate with multi transient pulses. As for MPSETs, a random generation model of MPSETs is exploratively proposed. Compared to the estimates obtained using circuit level simulations by HSpice, our proposed soft error rate analysis algorithm has 10% errors in SER estimation with speed up of 300 when the single-pulse-single-event transient (SPSET) is considered. We have also demonstrated the runtime and SER decrease with the increment of P0 using designs from the ISCAS-85 benchmarks. (authors)
Additional details
Publishing Information
- Publisher
- Chinese Nuclear Society
- Imprint Place
- Beijing (China)
- Imprint Title
- Proceedings of 16. national conference on nuclear electronics and nuclear detection technology (part 1)
- Imprint Pagination
- 361 p.
- Journal Page Range
- p. 141-150
Conference
- Title
- 16. national conference on nuclear electronics and nuclear detection technology
- Dates
- 15 Aug 2012
- Place
- Sichuan (China)
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 47094243
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALGORITHMS; AMPLITUDES; COMPARATIVE EVALUATIONS; ELECTRIC POTENTIAL; ERRORS; LOGIC CIRCUITS; PHYSICAL RADIATION EFFECTS; PULSES; RANDOMNESS; TRANSIENTS; VELOCITY; WIDTH
- Descriptors DEC
- DIMENSIONS; ELECTRONIC CIRCUITS; EVALUATION; MATHEMATICAL LOGIC; RADIATION EFFECTS
Optional Information
- Notes
- 6 figs., 1 tab., 17 refs.