BF2+ ion implantation into very-low-temperature Si wafer

BF2+ ions at 30 keV were implanted into silicon wafers held at -100degC or room temperature. The recrystallization process of the implanted wafers was examined by Rutherford backscattering (RBS) and Raman scattering. The value of χmin for wafers implanted at -100degC and annealed at 600degC is 0.05, close to that of crystalline Si, while it is 0.08 for the room-temperature implantation. The Raman spectrum for the case of low-temperature implantation also exhibits a smaller amount of residual defects than that for the room-temperature implantation. (author)