Published 1989
| Version v1
Miscellaneous
Measurement of conduction band discontinuity in InGaAsP/InP and GaAlAs/GaAs heterojunctions using organic contacts
Creators
- 1. Universidade Estadual de Campinas, SP (Brazil). Inst. de Fisica
Description
Published in summary form only
Availability note (English)
Available from the the Library of Comissao Nacional de Energia Nuclear, RJ, Brazil.Additional details
Additional titles
- Original title (Portuguese)
- Medida de descontinuidade da banda de conducao em heterojuncoes de InGaAsP/InP e GaAsAs/GaAs usando contatos organicos
Publishing Information
- Imprint Title
- Proceedings of the 12. National Meeting on Condensed Matter Physics
- Imprint Pagination
- 301 p.
- Journal Page Range
- p. 240.
Conference
- Title
- 12. National Meeting on Condensed Matter Physics.
- Dates
- 9-13 May 1989.
- Place
- Caxambu, MG (Brazil).
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 20071378
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract, Non-conventional Literature
- Descriptors DEI
- ALUMINIUM; ENERGY GAP; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM; LAYERS; PHOSPHORUS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ELEMENTS; GALLIUM COMPOUNDS; METALS; NONMETALS; SEMICONDUCTOR JUNCTIONS
Optional Information
- Notes
- Imprint:Anais do 12. Encontro Nacional de Fisica da Materia Condensada.